About the project
The project focuses on advancing quantum photonics through the development of scalable, on-chip single-photon sources using nitrogen rich silicon nitride (N rich SiN).
SiN is an advantageous material due to its high refractive index, low optical losses, and compatibility with semiconductor fabrication techniques. A key breakthrough underpinning this research is the discovery of room-temperature single-photon emitters (SPEs) in SiN films, which are essential for quantum technologies like communication, sensing, and computing.
This research aims to achieve the following primary goals:
- understanding the photophysical properties of N rich SiN SPEs
- investigating UV-induced refractive index changes in SiN for precise optical tuning
- develop an understanding on the UV exposure effect on the SPEs
- integrate these emitters with SiN waveguides for efficient light management
By leveraging these properties, the project seeks to create highly efficient, integrated quantum photonic circuits, contributing to advancements in quantum technology applications and positioning SiN as a critical material for future innovations.
