About the project
Our vision is to encourage the semiconductor industry to adopt 2D materials into their manufacturing pipelines and integrate them into 2 nm node transistor technologies for data communications, computing and sensing. However, one major obstacle that hinders industries from adopting 2D materials is doping them via a scalable and controllable doping technique. This PhD aims to solve the doping problem.
You will develop unconventional and novel techniques to dope 2D materials at wafer scales and integrate them into advanced transistor architectures using our state-of-the-art cleanroom facility.
You will also characterise the doped materials, test their transistor performance and evaluate your results against simulated devices.
You will also collaborate with leading research groups in nanoelectronics, nanophotonics and 2D materials from Imperial College, University of Cambridge and UCL.
The research will be based in the School of Electronics and Computer Science and have access to one of the largest University cleanrooms in Europe and several material and electronic characterisation suites. In other words, you will undertake a concept from inception to design, simulation, manufacturing and testing.
