Research Research groups Member of: Smart Electronic Materials and Systems Research projects Active projects Nano-Opto-Electro-Mechanical Integrated Oscillator Arrays For Energy-Efficient Cognitive Computing (NOEMIA) Researchers: Sponsor: EPSRC Sensor-integrated Nano-opto-electro-mechanical resonator arrays for energy-efficient physical reservoir computing Researchers: Completed projects Entangling dopant nuclear spins using double quantum dots Researchers: Sponsor: EPSRC Silicon-based Integrated Single-Spin Quantum Information Technology Researchers: Sponsor: EPSRC Nonvolatile atom transistors and low-power systems Researchers: Sponsor: EPSRC Publications 179 publications Page 11 of 18 Control of electrostatic coupling observed for silicon double quantum dot structures G. Yamahata, Yoshishige Tsuchiya, S. Oda, Z.A.K. Durrani & Hiroshi Mizuta, 2008, Japanese Journal of Applied Physics, 47, 4820-4826 Type: article Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization D Hippo, K Urakawa, Yoshishige Tsuchiya, Hiroshi Mizuta, N Koshida & S Oda, 2008, Japanese Journal of Applied Physics, 47, 7398-7402 Type: article Influence of nanocrystal size on the transport properties of Si nanocrystals X. Zhou, K. Usami, M.A. Rafiq, Yoshishige Tsuchiya, Hiroshi Mizuta & S. Oda, 2008, Journal of Applied Physics, 104, 24518 Type: article Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? M. Manoharan, Y. Tsuchiya, S. Oda & H. Mizuta, 2008 DOI: 10.1109/SNW.2008.5418435 Type: conference Observation of quantum level spectrum for silicon double single-electron transistors Y. Kawata, T. Yamaguchi, K. Ishibashi, Yoshishige Tsuchiya, S. Oda & Hiroshi Mizuta, 2008, Applied Physics Express, 1, 53705 Type: article Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure Yoshishige Tsuchiya, R Furukawa, K Kitamura, H Nohira & S Oda, 2008 Type: conference Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K M Manoharan, Yoshishige Tsuchiya, S Oda & Hiroshi Mizuta, 2008, Nano Letters, 8(12), 4648-4652 DOI: 10.1021/nl801992j Type: article Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge J. Ogi, Yoshishige Tsuchiya, S. Oda & Hiroshi Mizuta, 2008, Microelectronic Engineering, 85(5-6), 1410-1412 DOI: 10.1016/j.mee.2008.01.068 Type: article Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation M. Manoharan, Yoshishige Tsuchiya, S. Oda & Hiroshi Mizuta, 2008, Applied Physics Letters, 92(9), 92110 DOI: 10.1063/1.2891063 Type: article Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe M. Manoharan, Y. Kawata, Yoshishige Tsuchiya, S. Oda & Hiroshi Mizuta, 2008, Journal of Applied Physics, 103(4), 43719 DOI: 10.1063/1.2885343 Type: article Pagination Previous page Previous … 9 10 11 12 13 … Next page Next