Quantum Nano-Electronics & Nano-Photonics
International Conference Papers (114 including 33 first author papers and 22 invited papers.)
1.1.I. Tomita, S. Saito, and D. Hutchings, “GaAs/AlAs Intermixed Superlattice for Stimulated Raman Scattering”, 11th Int. Conf. on Optics-photonics design & Fabrication (ODF’18) 29S2-05 (Hiroshima, 2018).
2.D. Thomson, F. Gardes, K. Debnath, W. Zhang, K. Li, S. Liu, F. Meng, A. Khokhar, C. Littlejohns, J. Byers, L. Mastonardi, M. Husain, S. Saito, X. Chen, M. Milosevic, Y. Franz, A. F. Runge, S. Mailis, A. Peacock., P. Wilson, and G. T. Reed, “Towards high speed and low power silicon photonic data links”, Int. Conf. on Transparent Optical Networks (Bucharest, 2018) [Invited].
3.X. Chen, M. M. Milosevic, X. Yu, B. Chen, A. F. J. Runge, A. Z. Khokhar, S. Mailis, D. J. Thomson, A. C. Peacock, S. Saito, O. L. Muskens, and G. T. Reed, “Germanium implanted photonic devices for post-fabrication trimming and programmable circuits”, SPIE/COS Photonics Asia (Beijing, 2018) [Invited].
4.J. Byers, K. Debnath, H. Arimoto, M. K. Husain, M. Sotto, Z. Li, F. Liu, A. Khokhar, K. Kiang, S. A. Boden, D. J. Thomson, G. T. Reed, and S. Saito, “3D Fin Waveguide on 10nm Gate Oxide Bonded Double-SOI for Low VL Accumulation Modulator”, IEEE Int Conf. Group IV Photonics (GFP), WB4 (2018).
5.I. Tomita, K. Debnath, K. Ibukuro, M. K. Husain, J. Byers, Z. Zhang, S. Saito, “LiNbO3/Si-Hybrid Slot-Waveguide Electro-Optic Modulators”, IEEE Int Conf. Group IV Photonics (GFP), WP8 (2018).
6.T. D. Bucio, S. L. Scholl, S. T. Ilie, C. Lacva, K. Debnath, A. Z. Khokhar, M. Banakar, M. Sotto, K. M. Grabska, M. Clementi, D. Bajoni, M. Galli, S. Saito, P. Petropoulos, and F. Y. Gardes, “Low-Temperature NH3-Free Silicon Nitride Platforms for Integrated Photonics”, IEEE Int Conf. Group IV Photonics (GFP), FC2 (2018).
7.X. Yu, B. Chen, X. Chen, M. M. Milosevic, S. Saito, G. T. Reed, and O. L. Muskens, “Real-Time Phase Trimming of Mach-Zehnder Interferometers by Femtosecond Laser Annealing of Germanium Implanted Waveguides”, IEEE Int Conf. Group IV Photonics (GFP), FD2 (2018).
8.M. Sotto, K. Debnath, A. Z. Khokhar, I. Tomita, D. Thomson, and S. Saito, “Photonic Bonding Modes with Circular Polarization at Zero-Group-Velocity Points”, IEEE Int Conf. Group IV Photonics (GFP), FD4 (2018).
9.S. Saito, M. Sotto, J. Byers, K. Debnath, and I. Tomita, “Silicon photonic waveguides using nanoscale LEGO® blocks”, Photon 2018, p. 43 (2018) [Invited].
10.M. Sotto, K. Debnath, A. Khokhar, I. Tomita, D. Thomson, and S. Saito, “Singular field at anomalous Zero-Group-Velocity in non-symmorphic photonic crystal waveguides”, Photon 2018, p. 27 (2018).
11.S. Saito, Z. Li, H. Yoshimoto, I. Tomita, Y. Tsuchiya, Y. Sasago, H. Arimoto, F. Liu, M. K. Husain, D. Hisamoto, H. N. Rutt, and S. Kurihara, Solid State Devices and Materials (SSDM), M-1-03 (Sendai, 2017).
12.M. Sotto, K. Debnath, M. K. Husain, Z. Li, F. Liu, A. Z. Khokar, and S. Saito, “Transversal Symmetry Breaking in Novel Photonic Crystal Waveguide: Innovative Manner to Master Defect Band Dispersion Relation”, Solid State Devices and Materials (SSDM), PS-7-09 (Sendai, 2017).
13.K. Debnath, A. Khokhar, G. T. Reed, and S. Saito, “Fabrication of silicon slot waveguides with 10nm wide oxide slot”, IEEE 14th Int. Conf. on Group IV Photonics (GFP) (2017).
14.S. Saito, Z. Li, F. Liu, M. Sotto, D. Burt, J. Byers, M. K. Husain, K. Debnath, and Y. Tsuchiya, “Si Nano-LEGO® Blocks for Quantum Technologies”, JSPS workshop (NII, Tokyo, 2017) [Invited].
15.S. Saito, A. Z. Al-Attili, D. Burt, K. Oda, M. Takenaka, N. Higashitarumizu, Y. Ishikawa, “Germanium Light Sources for Silicon Photonics”, 9th Int. Conf. on Materials for Advanced Technologies (MRS) (Singapore, 2017) [Invited].
16.K. Debnath, T. D. Bucio, M. Galli, D. Bajoni, A. Al-Attili, A. Khokhar, S. Oo, S. Saito, and F. Gardes, “2D Photonic Crystal Structures in Silicon Rich Nitride Platform”, CLEO (San Jose, 2017).
17.Z. Li, M. Sotto, F. Liu, M. K. Husain, Z. K. Ioannis, H. Yoshimoto, K. Tani. Y. Sasago, D. Hisamoto, J. Fletcher, M. Kataoka, Y. Tsuchiya, and S. Saito, “Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures”, IEEE Electron Devices Technologies and Manufacturing Conference (EDTM, Toyama, 2017).
18.F. Liu, M. K. Husain, Z. Li, M. Sotto, D. Burt, J. Fletcher, M. Kataoka, Y. Tsuchiya, and S. Saito, “Transport properties in silicon nanowire transistors with atomically flat interfaces”, IEEE Electron Devices Technologies and Manufacturing Conference (EDTM, Toyama, 2017).
19.D. Burt, A. Z. Al-Attili, Z. Li, and F. Liu, N. Higashitarumizu, and Y. Ishikawa, O. Querin, F. Gardes, R. Kelsall, and S. Saito, “Strain-engineering in germanium membranes towards light sources on silicon”, IEEE Electron Devices Technologies and Manufacturing Conference (EDTM, Toyama, 2017).
20.T. D. Bucio, A. Al-Attili, K. Debnath, S. Saito, G. Mashanovich, A. Sanchez-Postigo, G. Wanguemert-Perez, A. Ortega-Moriux, R. Halir, P. Cheben, F. Gardes, “Silicon nitride for integrated photonic applications”, 7th Int. Conf. on Metamaterials, Photonic Crystals, and Plasmonics (META) (2016).
21.S. Saito, Z. Li, and M. Sotto, F. Liu, M. K. Husain, and Y. Tsuchiya, “Novel Transport Properties in Quantum Confined Silicon Channels at Low Temperatures”, Chemistry, Physics, and Applications of Coordination Nanosheets (UK-Japan Workshop, Cambridge, 2016) [Invited].
22.K. Debnath, A. Khokhar, G. Reed, and S. Saito, “Low-Loss Silicon Slot Waveguide Realized by Surface Roughness Reduction”, Group-IV Photonics (GFP), FB5-1 (2016).
23.A. Prasmusinto, A. Al-Attili, K. Debnath, and S. Saito, “Photonic Crystal Nanocavity with Atomically Flat Si (111) Interfaces”, MRS Spring meeting, EP7.12.03 (2016).
24.Z. Jiang, K. Debnath, G. T. Reed, and S. Saito, “Novel Electro-Absorption Modulator with Germanium Fins Evanescently Coupled to Silicon Waveguide”, MRS Spring Meeting, EP7.6.05 (2016).
25.A. Prasmusinto, A. Al-Attili, H. Arimoto, and S. Saito, “Impacts of atomically flat Si (111) surfaces on novel photonic crystal designs”, IEEE Nanotechnology (IEEE-NANO), 15th Int. Conf. on, pp. 963-966 (2015).
26.A. Al-Attili, M. Husain, F. Gardes, H. Arimoto, and S. Saito, J. Naoki, Y. Ishikawa, S. Kako, S. Iwamoto, and Y. Arakawa, “Fabrication of Ge micro-disks on free-standing SiO2 beams for monolithic light emission”, IEEE Nanotechnology (IEEE-NANO), 15th Int. Conf. on, pp. 1274-1277 (2015).
27.H. Arimoto, M. K. Husain, A. Prasmusinto, K. Debnath, A. Al-Attili, R. Petra, H. M. H. Chong, G. T. Reed, and S. Saito, “Low-loss silicon rectangular waveguides fabricated by anisotropic wet etching for roughness reduction”, IEEE Group-IV Photonics, (2015).
28.A. Z. Al-Attili, S. Kako, M. Husain, F. Gardes, S. Iwamoto, Y. Arakawa, and S. Saito, “Tensile Strain of Germanium Micro-Disks on Freestanding SiO2 Beams”, Solid State Devices and Materials (SSDM), A-5-1 (2015).
29.S. Saito, F. Y. Gardes, A. Z. Al-Attili, K. Tani, K. Oda, Y. Suwa, T. Ido, Y. Ishikawa, S. Kako, S. Iwamoto, and Y. Arakawa, “Group IV Light Sources to Enable the Convergence of Photonics and Electronics”, The 4th International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems- (ISPEC)(2014) [Invited].
30.M. Sagawa, K. Oda, K. Tani, Y. Suwa, J. Kasai, T. Okumura, S. Saito, and T. Ido, “Germanium light-emitting diodes on silicon for very-short-reach interconnect”, SPIE OPTO, 901001 (2014).
31.K. Tani, K. Oda, J. Kasai, T. Okumura, T. Mine, S. Saito, T. Ido, “Germanium waveguides on lateral silicon-on-insulator diodes for monolithic light emitters and photo detectors”, IEEE 10th Int. Conf. on Group IV Photonics (GFP), pp. 134-135 (2013).
32.M. K. Husain, V. Krishnamurthi, Y. P. Lin, F. M. Alkhalil, S.J. Pearce Y. Tsuchiya, H. M. H. Chong, H. Mizuta, and S. Saito, "Electrostatic definition of quantum dots in intrinsic silicon", UK Silicon QIP Meeting (2013).
33.K. Oda, K. Tani, T. Ido, and S. Saito, “Monolithic Ge optical emitters for photonic-electronic integration”, 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (2013).
34.K. Oda, K. Tani, T. Ido, and S. Saito, “Monolithic integrated Ge optical eitters for photonics-electronics conversion”, Quantum Science Symposium Asia (2013) [invited].
35.Z. Moktadir, S. Hang, S. Saito, and H. Mizuta, “Role of the edge states and the point defects on electronic transport in bilayer graphene field effect transistors@, JSAP-MRS Joiny Symposia, Symposium C: Advanced nano Carbon Devices and Materials (2013).
36.S. Hang Z. Moktadir, N. Khalor, S. Saito, and H. Mizuta, “Direct helium ion milling technology towards the fabrication of extremely down-scaled graphene nanodevices”, IEEE Silicon Nanoelectronics Workshop (Kyoto, 2013).
37.K. Tani, S. Saito, K. Oda, T. Okumura, T. Mine, and T. Ido, “Electroluminescence from Germanium Waveguides on Silicon-On-Insulator Diodes”, 2nd Int. Symposium on Photonics and Electronics Convergence (ISPEC), P17 (2012).
38.K. Oda, T. Okumura, K. Tani, S. Saito, and T. Ido, “Improvement of Photoluminescence from Ge Layers with Si3N4 Stressors”, 2nd Int. Symposium on Photonics and Electronics Convergence (ISPEC), P19 (2012).
39.Y. Suwa and S. Saito, “First-principles study of optical gain in strained germanium”, 2nd Int. Symposium on Photonics and Electronics Convergence (ISPEC), P20 (2012).
40.S. Kako, K. Oda, T. Okumura, Y. Suwa and S. Saito, T. Ido, and Y. Arakawa, “Time-resolved Photoluminescence study of Ge grown on Si”, 2nd Int. Symposium on Photonics and Electronics Convergence (ISPEC), P20 (2012).
41.M. Sagawa, S. Saito, K. Oda, K. Tani, Y. Suwa, and T. Ido, "Germanium Based Monolithic Light Sources on Silicon", The 2nd International Symposium on Photonics and Electronics Convergence (ISPEC), (2012).
42.K. Tani, S. Saito, K. Oda, T. Okumura, T. Mine, and T. Ido, “Lateral carrier injection to germanium for monolithic light sources”, IEEE 9th Int. Conf. on Group IV Photonics (GFP), 340 (2012).
43.K. Oda, T. Okumura, K. Tani, S. Saito, and T. Ido, “Improvement of photoluminescence from Ge layers with Si3N4/SiO2 Stressors”, IEEE 9th Int. Conf. on Group IV Photonics (GFP), 340 (2012).
44.S. Kako, T. Okumura, K. Oda, Y. Suwa, S. Saito, and T. Ido, “Time-resolved photoluminescence study of highly n-doped germanium grown on silicon”, IEEE 9th Int. Conf. on Group IV Photonics (GFP), 340 (2012).
45.K. Oda, K. Tani, S. Saito, and T. Ido, "Challenges to monolithic integrated Si/Ge optical emitters", 2012 Tsukuba Nanotechnology Symposium (TNS), (Ibaraki, 2012).
46.S. Saito, K. Tani, T. Okumura, M. Takahashi, K. Oda, T. Sugawara, Y. Lee, M. Sagawa, E. Nomoto, Y. Suwa, and T. Ido, “Si/Ge Quantum Well Light-Emitting Diode for Monolithic Integration in Si Photonics Chips”, The 221st ECS meeting, (Seattle, 2012) [invited].
47.D. Hisamoto, S. Saito, A. Shima, H. Yoshimoto, and K. Torii, “New type steep-S device using bipolar action”, IEEE Silicon Nanoelectronics Workshop (Honolulu, 2012).
48.K. Oda, K. Tani, S. Saito, and T. Ido, "Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth", Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME), (Hawaii, 2012).
49.Y. Suwa and S. Saito, "First-principles study of light emission from silicon and germanium", International Symposium on Computics: Quantum Simulation and Design, (Osaka, 2012).
50.Y. Suwa, S. Saito, K. Oda, K. Tani, M. Takahashi, E. Nomoto, T. Okumura, Y. Lee, M. Sagawa, T. Sugawara and T. Ido, "First-Principles Study of Light Emission from Si/Ge Quantum Well", 31st International Conference on Physics of Semiconductors, (Zurich, 2012).
51.K. Oda, K. Tani, S. Saito, T. Okumura, and T. Ido, “Crystallographical and Optical properties of GeOI Layers Fabricated by Epitaxial Growth Combined with Ge Condensation”, The 1st International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems (ISPEC2011), (Tokyo, 2011).
52.Y. Suwa, and S. Saito, “First-Principles Study of Light Emission from Germanium”, The 1st International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems (ISPEC2011), (Tokyo, 2011).
53.K. Tani, S. Saito, K. Oda, Y. Lee, M. Miura, T. Mine, T. Sugawara, and T. Ido, “Light Emission from Ge(111)-Fin and Germanium-On-Insulator Light Emitting Diodes”, The 1st International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems (ISPEC2011), (Tokyo, 2011).
54.S. Saito, K. Tani, T. Okumura, M. Takahashi, K. Oda, T. Sugawara, Y. Lee, M. Sagawa, E. Nomoto, Y. Suwa, and T. Ido, “Development of Si/Ge Light Source for Future Monolithic Integration”, The 1st International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems (ISPEC2011), (Tokyo, 2011).
55.K. Tani, K. Oda, Y. Lee, T. Mine, S. Saito, T. Sugawara, and T. Ido, “Light Detection and Emission in Germanium-On-Insulator Diodes", Solid State Devices and Materials (SSDM), I-8-4 (Nagoya, 2011).
56.K. Oda, K. Tani, T. Okumura, S. Saito, and T. Ido, “Improving optical properties of Ge layers fabricated by epitaxial growth combined with Ge condensation", Solid State Devices and Materials (SSDM), I-8-5 (Nagoya, 2011).
57.K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, and T. Ido, “Ge (111) Fin Light-Emitting Diodes", IEEE International Conference on Group IV Phtonics, ThD2 (London, 2011).
58.Y. Suwa and S. Saito, “First-principles study of light emission from silicon and germanium due to direct transitions", IEEE International Conference on Group IV Phtonics, pp. 222-224 (London, 2011).
59.S. Saito, "Silicon and Germanium Quantum Well Light-Emitting Diode", IEEE International Conference on Group IV Photonics (London, 2011) [invited].
60.S. Saito, "Silicon Quantum Well Light-Emitting Diode", IEEE International Conference on IC Design and Technology (ICICDT), (Kaohsiung, Taiwan, 2011) [invited].
61.Y. Suwa and S. Saito, "First Principles Calculation Studies on Germanium Quantum Well Light-Emitting Diode", Technical Group of Lasers and Quantum Electronics (LQE) (2010) [invited].
62.K. Oda, K. Tani, and S. Saito, "Crystallinity Improvement of Epitaxially Grown Ge Layers by Post Annealing", 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7) (2011).
63.D. Hisamoto, S. Saito, A. Shima, H. Yoshimoto, K. Torii, and E. Takeda, “CxFET: A Novel Steep Subthreshold Swing CMOS Featuring a Tunnel-Injection Bipolar Transistor and MOSFET Device Complex”, IEEE International Electron Devices Meeting (IEDM), 10.2 (San Francisco, 2010).
64.S. Saito, K. Tani, T. Takahama, M. Takahashi, E. Nomoto, Y. Matsuoka, J. Yamamoto, Y. Suwa, D. Hisamoto, S. Kimura, H. Arimoto, T. Sugawara, M. Aoki, K. Torii, and T. Ido, “Stimulated Emission in Silicon Fin Light-Emitting Diode”, Solid State Devices and Materials (SSDM), D-5-4, (Tokyo, 2010). [SSDM Award]
65.Y. Suwa, and S. Saito, “First-principles study of light emission from germanium quantum-well”, IEEE the 22nd International Conference on Semiconductor Laser Conference (ISLC) pp. 131-132 (2010).
66.S. Saito, “Optical Gain from Si Quantum Well via CMOS technology”, European Materials Research Society (E-MRS) Spring Meeting, (Strasbourg, 2010) [invited].
67.S. Saito, “Silicon Quantum Well Light-Emitting Diode for Photonics-Electronics Convergence”, The Sixth International Nanotechnology Conference on Communication and Cooperation (INC6), (Grenoble, 2010) [invited].
68.S. Saito, “Optical Gain from Si Quantum Well via CMOS technology”, European Materials Research Society (E-MRS) Spring Meeting, (Strasbourg, 2010) [invited].
69.S. Saito, Y. Suwa, H. Arimoto, D. Hisamoto, T. Mine, K. Takeda, T. Sugawara, and M. Aoki, “Silicon Quantum Well Light-Emitter for Optical Interconnections”, IEEE Optical Fiber Communication Conference and Exposition (OFC), (San Diego, 2010).
70.T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, and M. Hatano, " Low Voltage Operating Amorphous Oxide TFTs", International Display Workshop (IDW) '09 - The 16th International Display Workshops, (Miyazaki, 2009).
71.S. Saito, N. Sakuma, Y. Suwa, H. Arimoto, D. Hisamoto, H. Uchiyama, J. Yamamoto, T. Sakamizu, T. Mine, S. Kimura, T. Sugawara, M. Aoki, and T. Onai, "Optical Gain in Silicon Quantum Well", Innovations of the Silicon, by the Silicon, for the Silicon, (Tokyo, 2009) [invited].
72.S. Saito, N. Sakuma, Y. Suwa, H. Arimoto, D. Hisamoto, H. Uchiyama, J. Yamamoto, T. Sakamizu, T. Mine, S. Kimura, T. Sugawara, M. Aoki, and T. Onai, "Optical Gain in Ultra-Thin Silicon Resonant Cavity Light-Emitting Diode", Solid State Devices and Materials (SSDM), I-2-1, 212 (Sendai, 2009) [invited].
73.S. Saito, “Ultra-Thin Silicon Light-Emitting Diode”, Nanolaser based Optical Sensing, (U. of Tokyo, 2009) [invited].
74.T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, M. Hatano, K. Torii, and T. Onai, " 1.5-V Operating Fully-Depleted Amorphous Oxide Thin Film Transistors Achieved by 63-mV/dec Subthreshold Slope", IEEE International Electron Devices Meeting (IEDM), 4.2 (San Francisco, 2008) [cited 17 times].
75.S. Saito, N. Sakuma, Y. Suwa, H. Arimoto, D. Hisamoto, H. Uchiyama, J. Yamamoto, T. Sakamizu, T. Mine, S. Kimura, T. Sugawara, M. Aoki, and T. Onai, " Observation of Optical Gain in Ultra-Thin Silicon Resonant Cavity Light-Emitting Diode", IEEE International Electron Devices Meeting (IEDM), 19.5 (San Francisco, 2008).
76.S. Saito, "Lateral Carrier Injection to Quantum Confined Ultra-Thin Silicon", MRS fall meeting (Boston) MM 7.4 (Boston, 2008) [invited].
77.Y. Suwa, and S. Saito, “First Principles Study of Electroluminescence in Ultra-Thin Silicon Film”, The 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM), (2008).
78.Y. Tsuchiya, S. Matsuda, T. Nagami, S. Saito, T. Arai, T. Shimada, S. Oda, and H. Mizuta, “Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications”, IEEE Silicon Nanoelectrinics Workshop, M0415 (Honolulu, 2008).
79.T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, and S. Oda, “Transient response anlaysis of programming/readout characteristics for NEMS memory”, IEEE Silicon Nanoelectrinics Workshop, M0430 (Honolulu, 2008).
80.A. Tanaka, Y. Tsuchiya, K. Usami, S. Saito, T. Arai, H. Mizuta, and S. Oda, “Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method, the 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3), p. 543 (Wellington, 2007).
81.S. Saito, D. Hisamoto, H. Shimizu, H. Hamamura, R. Tsuchiya, Y. Matsui, T. Mine, T. Arai, N. Sugii, K. Torii, S. Kimura, and T. Onai, "Quantum Confined Ultra-Thin Silicon Light-Emitting Transistor for On-Chip Optical Interconnection", International Conference on Solid State Devices and Materials (Tsukuba, SSDM, 2007) [invited].
82.S. Saito, D. Hisamoto, H. Shimizu, H. Hamamura, R. Tsuchiya, Y. Matsui, T. Mine, T. Arai, N. Sugii, K. Torii, S. Kimura, and T. Onai, "Light-Emitting Transistor Based on Ultra-Thin Silicon", 4th International Conference on Group IV Photonics, (IEEE, Tokyo, 2007) [invited].
83.H. Yoshimoto, N. Sugii, D. Hisamoto, S. Saito, R. Tsuchiya, and S. Kimura, "Extension of Universal-Mobility Curve to Multi-Gate MOSFETs", IEEE International Electron Devices Meeting (IEDM) (Washington, 2007).
84.I. Yanagi, T. Mine, A. Shima, S. Saito, D. Hisamoto, and Y. Shimamoto, “Quantum confinement effect for efficient hole injection in MONOS-type nonvolatile memory – the role of ultrathin i-Si/p+ poly-Si stacked gate structure fabricated by laser spike annealing”, IEEE VLSI Technology, pp. 146-147 (2007).
85.T. Nagami, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, and S. Oda, “Electro-Mechanical simulation of programming/readout characteristics for NEMS memory”, IEEE Silicon Nanoelectrinics Workshop, pp. 105-106 (Honolulu, 2006).
86.N. Momo, T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, Y. Kimura, T. Shimada, H. Mizuta, and S. Oda, “Fabrication and characterization of nanoscale suspended floating gates for NEMS memory”, IEEE Silicon Nanoelectronics Workshop, pp.109-110 (Honolulu, 2006).
87.S. Saito, D. Hisamoto, Y. Kimura, N. Sugii, R. Tsuchiya, K. Torii, and S. Kimura, "Origin of Drivability Enhancement in Scaled pMOSFETs with 45°Rotated <100> channels", VLSI Technology, Digest of Technical Papers. Symposium on (VLSI), pp. 150-151 (Hawaii, 2006) [cited 6 times].
88.T. Nagami, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, and S. Oda, “Mechanical property analysis and structural optimization for NEMS memory devices”, IEEE Silicon Nanoelectrinics Workshop, (Kyoto, 2005).
89.G. Yamahata, A. Tanaka, Y. Kawata, Y. Tsuchiya, S. Saito, T. Arai, H. Mizuta, and S. Oda, “Bottom-up fabrication of Si nanodot transistors using the nc-Si dots solution, IEEE Silicon Nanoelectronics Workship (Kyoto, 2005).
90.S. Saito, T. Arai, H. Fukuda, T. Onai, D. Hisamoto, and S. Kimura, “Transport Properties in Low Dimensional Artificial Lattice of Au Nano-particles”, The 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM), (2005).
91.M. Ando, C. Lee, S. Saito, and Y. A. Ono, “Effect of environment on ionization of excited atoms embedded in a solid-state cavity”, The 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM), (2005).
92.T. Arai, S. Saito, H. Fukuda, and T. Onai, ”Chemical Controlled of 2D-Artificial-Lattice composed by Metal-Nano-Particles”, Second International Conference on Advanced Materials and Nanotechnology (AMN-2), (New Zealand, 2005).
93.S. Saito, T. Arai, H. Fukuda, S. Kimura, and T. Onai, “Iodine Doping to Self-Organized Gold Nano-Particles”, Second International Conference on Advanced Materials and Nanotechnology (AMN-2), (New Zealand, 2005).
94.S. Saito, “Physical Origins of Mobility Reduction in High-K Gate Transistors”, 207th Electrochemical Society Meeting, Proceedings volume 2005-06, SYMPOSIUM ON ULSI PROCESS INTEGRATION IV〕pp. 155-168 (2005) [invited].
95.T. Arai, S. Saito, H. Fukuda, and T. Onai, “Synthesis, mono-layer formation, and control in electronic characteristics of 3-nm Size Gold-Nano-Particle”, 2004 International Microprocesses and Nanotechnology Conference, (2004).
96.S. Saito, T. Arai, H. Fukuda, R. Tsuchiya, D. Hisamoto, S. Kimura, and T. Onai, “Transport Characteristics of Self-Organized Artificial Lattice”, International Conference on Solid State Devices and Materials (SSDM), pp. 902-903 (2004).
97.J. Yugami, S. Tsujikawa, R. Tsuchiya, S. Saito, Y. Shimamoto, K. tori, T. Mine, and T. Onai, “Advanced oxynitride gate dielectrics for CMOS applications”, International Workshop on Gate Insulator (IWGI), pp. 140-145 (2003).
98.L. -Å. Ragnarsson, L. Pantisano, V. Kaushik, S. Saito, Y. Shimamoto, S. De Gendt, and M. Heyns, “The Impact of sub monolayers of HfO2 on the device performance of high-k based transistors”, IEEE International Electron Devices Meeting (IEDM), pp. 87-90 (Washington, 2003) [cited 42 times].
99.O. Tonomura, Y. Shimamoto, S. Saito, K. Torii, M. Hiratani, and J. Yugami, “Analysis of High Leakage Current in the MOSFET on Mobility”, International Meeting for Future of Electron Devices, Kansai, (2003).
100.H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa and A. Toriumi, “Re-Examination on the Universality of Si-MOS Inversion Layer Mobility”, International Conference on Solid State Devices and Materials (Tokyo, SSDM), pp. 716-717 (2003).
101.M. Hiratani, S. Saito, S. Tsujikawa, Y. Matsui, O. Tonomura, K. Torii, J. Yugami, and S. Kimura, “Hihg-k/Oxynitride Gate Dielectric-Searching for Serendipitous Materials”, International Conference on Solid State Devices and Materials (Tokyo, SSDM), pp.700-701 (2003).
102.T. Ishikawa, S. Tsujikawa, S. Saito, D. Hisamoto, and S. Kimura, “Direct evaluation of interface state in a high-k gate stack by 1/f noise measurements”, International Conference on Solid State Devices and Materials (Tokyo, SSDM), pp. 14-15 (2003).
103.O. Tonomura, Y. Shimamoto, K. Torii, S. Saito, J. Yugami, and M. Hiratani, “Evaluation of Mobility in the MOSFET With High Leakage Current”, IEEE International Conference on MICROELECTRONIC TEST STRUCTURE (Monterey, 2003).
104.S. Saito, D. Hisamoto, M. Hiratani, and S. Kimura, "Unified Mobility Model for High- Gate Stacks", IEEE International Electron Devices Meeting (IEDM), pp. 145-148 (Washington, 2003) [cited 52 times].
105.S. Saito, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, D. Hisamoto, T. Mine, K. Torii, J. Yugami, M. Hiratani, T. Onai, and S. Kimura, "Impact of Oxygen-enriched SiN Interface on Al2O3 Gate Stack - An Innovative Solution to Low-power CMOS", VLSI Technology, Digest of Technical Papers. Symposium on (VLSI), pp. 145-146 (Kyoto, 2003).
106.Y. Shimamoto, S. Saito, S. Tsujikawa, O. Tonomura, J. Yugami, K. Torii, and M. Hiratani, “Electron mobility controlled by the built-in interface of SiON gate dielectric gate dielectric”, IEEE Semiconductor Interface Specialists Conference (SISC) (San Diego, 2002).
107.K. Torii, Y. Shimamoto, S. Saito, O. Tonomura, M. Hiratani, Y. Manabe, M. Caymax, and J. W. Maes, “The mechanism of mobility degradation in MISFETs with Al2O3 gate dielectric”, VLSI Technology, Digest of Technical Papers. Symposium on (VLSI), pp. 188-189 (Hawaii, 2002) [cited 40 times].
108.S. Saito, Y. Shimamoto, K. Torii, Y. Manabe, M. Caymax, J. W. Maes, M. Hiratani, and S. Kimura, “Mobility Reduction due to Remote Charge Scattering in Al2O3/SiO2 Gate-Stacked MISFETs”, International Conference on Solid State Devices and Materials (Nagoya, SSDM), pp. 704-705 (2002) [SSDM Award].
109.K. Torii, Y. Shimamoto, S. Saito, K. Obata, D. Hisamoto, N. Yokoyama, M. Hiratani, T. Onai, and T. Yamauchi "Fixed charge-induced mobility degradation and its recovery in MISFETs", International Workshop on Gate Insulator (IWGI), p. 230-232 (Tokyo, 2001).
110.Y. Shimamoto, K. Obata, S. Saito, K. Torii, and M. Hiratani, “The ultrathin Al2O3 gate dielectrics with built-in interfacial silicon oxide”, IEEE Semiconductor Interface Specialists Conference (SISC) (Washington, 2001).
111.S. Saito, K. Torii, M. Hiratani, and T. Onai, "Quantitative Understanding of Mobility Degradation due to Remote Charge Scattering", International Workshop on Gate Insulator (IWGI), p. 116-118 (Tokyo, 2001).
112.S. Saito and K. Torii, "Quantum Mechanical Analysis of Accumulation Layers in MOS Structures", International Conference on Solid State Devices and Materials (SSDM), p. 140-141 (Tokyo, 2001).
113.S. Saito, S. Kurihara, and Y. Y. Suzuki, “Superconductivity with Antiferromagnetic Background in d=∞ Hubbard Model”, Stripes and Related Phenomena, edited by A. Bianconi and N. L. Saini (Stripes 98, Rome, Italy Kluwer Academic, 1999), pp. 399-405.
114.S. Saito, S. Kurihara, and Y. Y. Suzuki, “Coexistence of Superconductivity and Charge Density Waves in d=∞ Attractive Hubbard Model”, The Proceedings of the 9th International Conference on Recent Progress in Many-Body Theories, edited by D. Neilson and R. F. Bishop (Sydney, Australia, World Scientific, 1998), pp. 506-509.
